Product Summary

The IRFB9N65A is a Power MOSFET. It can be used in (1)switch mode power supply (SMPS); (2)uninterruptible power supply; (3)high speed power switching.

Parametrics

IRFB9N65A absolute maximum ratings: (1)Drain-Source Voltage: 650 V; (2)Gate-Source Voltage: +/-30 V; (3)Pulsed Drain Current: 21 A; (4)Linear Derating Factor: 1.3 W/°C; (5)Single Pulse Avalanche Energy: 325 mJ; (6)Repetitive Avalanche Current: 5.2 A; (7)Repetitive Avalanche Energy: 16 mJ; (8)Operating Junction and Storage Temperature Range: -55 to + 150 °C.

Features

IRFB9N65A features: (1)low gate charge qg results in simple drive requirement; (2)improved gate, avalanche and dynamic dv/dt ruggedness; (3)fully characterized capacitance and avalanche voltage and current; (4)lead (Pb)-free available.

Diagrams

IRFB9N65A block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB9N65A
IRFB9N65A
Vishay/Siliconix
MOSFET N-Chan 650V 8.5 Amp
Data Sheet
0-725: $2.02
725-1000: $1.94
1000-2000: $1.89
IRFB9N65A, SiHFB9N65A
IRFB9N65A, SiHFB9N65A
Other

Data Sheet
Negotiable 
IRFB9N65APBF
IRFB9N65APBF
Vishay/Siliconix
MOSFET N-Chan 650V 8.5 Amp
Data Sheet
0-1: $1.72
1-10: $1.38
10-100: $1.25
100-250: $1.06