Product Summary
The IRFB9N65A is a Power MOSFET. It can be used in (1)switch mode power supply (SMPS); (2)uninterruptible power supply; (3)high speed power switching.
Parametrics
IRFB9N65A absolute maximum ratings: (1)Drain-Source Voltage: 650 V; (2)Gate-Source Voltage: +/-30 V; (3)Pulsed Drain Current: 21 A; (4)Linear Derating Factor: 1.3 W/°C; (5)Single Pulse Avalanche Energy: 325 mJ; (6)Repetitive Avalanche Current: 5.2 A; (7)Repetitive Avalanche Energy: 16 mJ; (8)Operating Junction and Storage Temperature Range: -55 to + 150 °C.
Features
IRFB9N65A features: (1)low gate charge qg results in simple drive requirement; (2)improved gate, avalanche and dynamic dv/dt ruggedness; (3)fully characterized capacitance and avalanche voltage and current; (4)lead (Pb)-free available.
Diagrams
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![]() IRFB9N65A |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 650V 8.5 Amp |
![]() Data Sheet |
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![]() IRFB9N65A, SiHFB9N65A |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() IRFB9N65APBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 650V 8.5 Amp |
![]() Data Sheet |
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